GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy
We prepared a novel diluted magnetic semiconductor of GaFeAs grown on (001) GaAs substrates using molecular beam epitaxy (MBE). The low growth temperature of the buffered GaAs layers is a key factor necessary for the creation of GaFeAs epilayers, without the anomalous nucleation of Fe atoms. The max...
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| Veröffentlicht in: | Thin solid films 2000-08, Vol.371 (1), p.272-277 |
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| container_title | Thin solid films |
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| creator | Hirose, Shingo Yamaura, Masaaki Haneda, Shigeru Hara, Kazuhiko Munekata, Hiro |
| description | We prepared a novel diluted magnetic semiconductor of GaFeAs grown on (001) GaAs substrates using molecular beam epitaxy (MBE). The low growth temperature of the buffered GaAs layers is a key factor necessary for the creation of GaFeAs epilayers, without the anomalous nucleation of Fe atoms. The maximum Fe concentration of 1.5×10
21 cm
−3, which is the highest reported value, was successfully doped uniformly in GaAs. The 1×1-reflection high-energy electron diffraction patterns, indicating a well-ordered flat surface, were maintained during the growth of GaFeAs. X-Ray diffraction measurements showed that the peak shifted toward the higher angle side with an increasing Fe content in GaAs, implying that Fe atoms substitutionally occupy the GaAs lattice sites. Magnetization measurements revealed that the GaFeAs epilayers were predominantly paramagnetic, and that 5% of the total Fe atoms were segregated in the MBE-grown GaFeAs epilayers. |
| doi_str_mv | 10.1016/S0040-6090(00)00999-8 |
| format | Article |
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21 cm
−3, which is the highest reported value, was successfully doped uniformly in GaAs. The 1×1-reflection high-energy electron diffraction patterns, indicating a well-ordered flat surface, were maintained during the growth of GaFeAs. X-Ray diffraction measurements showed that the peak shifted toward the higher angle side with an increasing Fe content in GaAs, implying that Fe atoms substitutionally occupy the GaAs lattice sites. Magnetization measurements revealed that the GaFeAs epilayers were predominantly paramagnetic, and that 5% of the total Fe atoms were segregated in the MBE-grown GaFeAs epilayers.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(00)00999-8</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Diluted magnetic semiconductor ; Exact sciences and technology ; GaFeAs ; Magnetic properties and materials ; Magnetic semiconductors ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular beam epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Studies of specific magnetic materials</subject><ispartof>Thin solid films, 2000-08, Vol.371 (1), p.272-277</ispartof><rights>2000 Elsevier Science S.A.</rights><rights>2000 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-14428ef9d8d66cce3226ace89a6c30b81d4cc828080932dbfc0fba1af12a77703</citedby><cites>FETCH-LOGICAL-c433t-14428ef9d8d66cce3226ace89a6c30b81d4cc828080932dbfc0fba1af12a77703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609000009998$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1513130$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hirose, Shingo</creatorcontrib><creatorcontrib>Yamaura, Masaaki</creatorcontrib><creatorcontrib>Haneda, Shigeru</creatorcontrib><creatorcontrib>Hara, Kazuhiko</creatorcontrib><creatorcontrib>Munekata, Hiro</creatorcontrib><title>GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy</title><title>Thin solid films</title><description>We prepared a novel diluted magnetic semiconductor of GaFeAs grown on (001) GaAs substrates using molecular beam epitaxy (MBE). The low growth temperature of the buffered GaAs layers is a key factor necessary for the creation of GaFeAs epilayers, without the anomalous nucleation of Fe atoms. The maximum Fe concentration of 1.5×10
21 cm
−3, which is the highest reported value, was successfully doped uniformly in GaAs. The 1×1-reflection high-energy electron diffraction patterns, indicating a well-ordered flat surface, were maintained during the growth of GaFeAs. X-Ray diffraction measurements showed that the peak shifted toward the higher angle side with an increasing Fe content in GaAs, implying that Fe atoms substitutionally occupy the GaAs lattice sites. 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The low growth temperature of the buffered GaAs layers is a key factor necessary for the creation of GaFeAs epilayers, without the anomalous nucleation of Fe atoms. The maximum Fe concentration of 1.5×10
21 cm
−3, which is the highest reported value, was successfully doped uniformly in GaAs. The 1×1-reflection high-energy electron diffraction patterns, indicating a well-ordered flat surface, were maintained during the growth of GaFeAs. X-Ray diffraction measurements showed that the peak shifted toward the higher angle side with an increasing Fe content in GaAs, implying that Fe atoms substitutionally occupy the GaAs lattice sites. Magnetization measurements revealed that the GaFeAs epilayers were predominantly paramagnetic, and that 5% of the total Fe atoms were segregated in the MBE-grown GaFeAs epilayers.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(00)00999-8</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diluted magnetic semiconductor Exact sciences and technology GaFeAs Magnetic properties and materials Magnetic semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Studies of specific magnetic materials |
| title | GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy |
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