Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs

Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs

Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO2 interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp...

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Veröffentlicht in:Microelectronics and reliability 2000-04, Vol.40 (4-5), p.735-738
Hauptverfasser: Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N
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Tyagulski, I.P
Gomeniuk, Y.V
Osiyuk, I.N
description Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO2 interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation.
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title Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs
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