Effective method for evaluation of semiconductor laser quality

Effective method for evaluation of semiconductor laser quality

The measurements of one hundred 1.3 μm planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconduc...

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Veröffentlicht in:Microelectronics and reliability 2000-02, Vol.40 (2), p.333-337
Hauptverfasser: Li, Hongyan, Qi, Liyun, Shi, Jiawei, Jin, Enshun, Li, Zhengting, Gao, Dingsan, Yu, Jinzhong, Guo, Liang
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container_end_page 337
container_issue 2
container_start_page 333
container_title Microelectronics and reliability
container_volume 40
creator Li, Hongyan
Qi, Liyun
Shi, Jiawei
Jin, Enshun
Li, Zhengting
Gao, Dingsan
Yu, Jinzhong
Guo, Liang
description The measurements of one hundred 1.3 μm planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices.
doi_str_mv 10.1016/S0026-2714(99)00205-X
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title Effective method for evaluation of semiconductor laser quality
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