Field emission characteristic studies of chemical vapor deposited diamond films
Chemical vapor deposited (CVD) diamond films exhibiting stable and intrinsic negative electron affinity (NEA) surfaces are expected to have practical uses in field emission display devices. In this work, we attempt to study how NEA diamond surfaces can be removed and re-established by various surfac...
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| Veröffentlicht in: | Solid-state electronics 2000-10, Vol.44 (10), p.1733-1741 |
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| container_title | Solid-state electronics |
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| creator | Chen, Chi-Lin Chen, Chau-Shu Lue, Juh-Tzeng |
| description | Chemical vapor deposited (CVD) diamond films exhibiting stable and intrinsic negative electron affinity (NEA) surfaces are expected to have practical uses in field emission display devices. In this work, we attempt to study how NEA diamond surfaces can be removed and re-established by various surface treatments. The emission current density can be enhanced from 0.8 to 100 μA/cm
2 at an electric field of 18 V/μm by hydrogenation treatment. The field emission current of diamond surfaces varies manifestly with temperature as studied in this experiment which is contradictory to the simple Fowler–Nordheim equation. The field emission equation for CVD diamond surfaces at low field and high temperatures derived in this work agrees satisfactorily with the experimental results. |
| doi_str_mv | 10.1016/S0038-1101(00)00139-8 |
| format | Article |
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2 at an electric field of 18 V/μm by hydrogenation treatment. The field emission current of diamond surfaces varies manifestly with temperature as studied in this experiment which is contradictory to the simple Fowler–Nordheim equation. The field emission equation for CVD diamond surfaces at low field and high temperatures derived in this work agrees satisfactorily with the experimental results.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(00)00139-8</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Diamond films ; Field emission ; Hydrogenation ; J– V characteristics</subject><ispartof>Solid-state electronics, 2000-10, Vol.44 (10), p.1733-1741</ispartof><rights>2000 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-a5e0367f007057eec9c1abf909b27431b5cd1e49c688493fd8595ce9628f1c4e3</citedby><cites>FETCH-LOGICAL-c404t-a5e0367f007057eec9c1abf909b27431b5cd1e49c688493fd8595ce9628f1c4e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0038-1101(00)00139-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids></links><search><creatorcontrib>Chen, Chi-Lin</creatorcontrib><creatorcontrib>Chen, Chau-Shu</creatorcontrib><creatorcontrib>Lue, Juh-Tzeng</creatorcontrib><title>Field emission characteristic studies of chemical vapor deposited diamond films</title><title>Solid-state electronics</title><description>Chemical vapor deposited (CVD) diamond films exhibiting stable and intrinsic negative electron affinity (NEA) surfaces are expected to have practical uses in field emission display devices. In this work, we attempt to study how NEA diamond surfaces can be removed and re-established by various surface treatments. The emission current density can be enhanced from 0.8 to 100 μA/cm
2 at an electric field of 18 V/μm by hydrogenation treatment. The field emission current of diamond surfaces varies manifestly with temperature as studied in this experiment which is contradictory to the simple Fowler–Nordheim equation. The field emission equation for CVD diamond surfaces at low field and high temperatures derived in this work agrees satisfactorily with the experimental results.</description><subject>Diamond films</subject><subject>Field emission</subject><subject>Hydrogenation</subject><subject>J– V characteristics</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QdiT6GF1sp_JSaRYFQo9qOeQTiYY2d3UZFvw35u24tXTDMzzvjAPY5ccbjnw5u4VoBQ5T_s1wA0AL2UujtiEi1bmRQX1MZv8IafsLMZPACgaDhO2nDvqTEa9i9H5IcMPHTSOFFwcHWZx3BhHMfM2XRKEusu2eu1DZmjtoxvJZMbp3g8ms67r4zk7sbqLdPE7p-x9_vg2e84Xy6eX2cMixwqqMdc1Qdm0FqCFuiVCiVyvrAS5Ktqq5KsaDadKYiNEJUtrRC1rJNkUwnKsqJyyq0PvOvivDcVRpQ-Quk4P5DdRpRYpm4YnsD6AGHyMgaxaB9fr8K04qJ0-tdendm4UgNrrUyLl7g85Sl9sHQUV0dGAZFwgHJXx7p-GHyFgd5Q</recordid><startdate>20001001</startdate><enddate>20001001</enddate><creator>Chen, Chi-Lin</creator><creator>Chen, Chau-Shu</creator><creator>Lue, Juh-Tzeng</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20001001</creationdate><title>Field emission characteristic studies of chemical vapor deposited diamond films</title><author>Chen, Chi-Lin ; Chen, Chau-Shu ; Lue, Juh-Tzeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-a5e0367f007057eec9c1abf909b27431b5cd1e49c688493fd8595ce9628f1c4e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Diamond films</topic><topic>Field emission</topic><topic>Hydrogenation</topic><topic>J– V characteristics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Chi-Lin</creatorcontrib><creatorcontrib>Chen, Chau-Shu</creatorcontrib><creatorcontrib>Lue, Juh-Tzeng</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Chi-Lin</au><au>Chen, Chau-Shu</au><au>Lue, Juh-Tzeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Field emission characteristic studies of chemical vapor deposited diamond films</atitle><jtitle>Solid-state electronics</jtitle><date>2000-10-01</date><risdate>2000</risdate><volume>44</volume><issue>10</issue><spage>1733</spage><epage>1741</epage><pages>1733-1741</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>Chemical vapor deposited (CVD) diamond films exhibiting stable and intrinsic negative electron affinity (NEA) surfaces are expected to have practical uses in field emission display devices. In this work, we attempt to study how NEA diamond surfaces can be removed and re-established by various surface treatments. The emission current density can be enhanced from 0.8 to 100 μA/cm
2 at an electric field of 18 V/μm by hydrogenation treatment. The field emission current of diamond surfaces varies manifestly with temperature as studied in this experiment which is contradictory to the simple Fowler–Nordheim equation. The field emission equation for CVD diamond surfaces at low field and high temperatures derived in this work agrees satisfactorily with the experimental results.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(00)00139-8</doi><tpages>9</tpages></addata></record> |
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| subjects | Diamond films Field emission Hydrogenation J– V characteristics |
| title | Field emission characteristic studies of chemical vapor deposited diamond films |
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