An efficient CAD-oriented large-signal MOSFET model

An efficient computer-aided-design-oriented large-signal microwave model for silicon MOSFETs is presented based on the well-founded small-signal equivalent circuit including self-heating effect and charge conservation condition. The proposed new single continuously differentiable empirical equations...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2000-10, Vol.48 (10), p.1732-1742
Hauptverfasser:	Grebennikov, A.V., Fujiang Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Charge Circuit design Conservation Data mining Differential equations Electrical resistance measurement Equivalent circuits Mathematical models Microwaves MOSFET circuits MOSFETs Predictive models Silicon Temperature Threshold voltage
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