Deep ultra-violet measurements of SiON anti-reflective coatings by spectroscopic ellipsometry

Deep ultra-violet measurements of SiON anti-reflective coatings by spectroscopic ellipsometry

The microelectronics industry reduces its critical dimension by a factor of two every 4 years and is now using the KrF * excimer laser line at 248 nm as the source of photolithography steppers in production in deep UV (

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Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 1998-02, Vol.313 (1-2), p.742-744
Hauptverfasser: Defranoux, Christophe, Piel, Jean-Philippe, Stehle, Jean-Louis
Format: Artikel
Sprache:eng
Schlagworte:
Anti-reflective (AR) coating
Photolithography
Spectroscopic ellipsometry
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Beschreibung
Zusammenfassung:The microelectronics industry reduces its critical dimension by a factor of two every 4 years and is now using the KrF * excimer laser line at 248 nm as the source of photolithography steppers in production in deep UV (
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00989-9