Dependence of Electrical Characteristics of NbN/TiN/NbN Josephson Junctions on Barrier Thickness and Temperature

The dependence of the product of critical current I c and normal-state resistance R n for NbN/TiN/NbN Josephson junctions on TiN barrier thickness and temperature has been measured. From a comparison of measured results and theoretically calculated I c R n values, the coherence lengths in TiN films...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000-01, Vol.39 (12B), p.L1289-L1291
Hauptverfasser:	Hirotake Yamamori, Hirotake Yamamori, Hitoshi Sasaki, Hitoshi Sasaki, Akira Shoji, Akira Shoji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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