Design and fabrication of double modulation doped InAlAs/InGaAs/InAs heterojunction FET's for high-speed and millimeter-wave applications

We report the design, fabrication, and characterization of InP-based double-sided-doped (DSD) MODFET's with InAs-layer-inserted channels. Devices based on optimized structures show a significant improvement in the effective saturation velocity, from 2.4x10 super(7) cm /s for lattice-matched MOD...

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Veröffentlicht in:	IEEE transactions on electron devices 1998-01, Vol.45 (1), p.21-30
Hauptverfasser:	Xu, Dong, Heiss, Heiner G, Kraus, Stefan A, Sexl, M, Boehm, G, Traenkle, G, Weimann, G, Abstreiter, G
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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