Depth defined optoelectronic modulation spectroscopy
It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the...
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| Veröffentlicht in: | Journal of electronic materials 2000-05, Vol.29 (5), p.591-597 |
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| container_end_page | 597 |
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| container_title | Journal of electronic materials |
| container_volume | 29 |
| creator | Chiu, Chi-Hsin Swanson, J.G |
| description | It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2x10 super(9) electrons/cm super(2)/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating. |
| doi_str_mv | 10.1007/s11664-000-0050-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27481622</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27481622</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-2b76ad6ee9a121dc3f0b4a29ff94c05b70c4e3a260bc25e3b02f6eddcff39003</originalsourceid><addsrcrecordid>eNpdkD1PwzAQhi0EEqXwA9giBrbAnb-SjKhQQKrE0oHNcpyzSJXGIU6G_ntcysRwOun06PS-D2O3CA8IUDxGRK1lDgBpFOTijC1QSZFjqT_P2QKExlxxoS7ZVYw7AFRY4oLJZxqmr6wh3_bUZGGYAnXkpjH0rcv2oZk7O7Whz-Lwe40uDIdrduFtF-nmby_Zdv2yXb3lm4_X99XTJncCcMp5XWjbaKLKIsfGCQ-1tLzyvpIOVF2AkyQs11A7rkjUwL2mpnHeiwpALNn96e0whu-Z4mT2bXTUdbanMEfDC1mi5jyBd__AXZjHPkUzHGSZoEInCE-QSy3iSN4MY7u348EgmKNDc3JokkNzdGiE-AEzQGTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204881676</pqid></control><display><type>article</type><title>Depth defined optoelectronic modulation spectroscopy</title><source>SpringerLink Journals - AutoHoldings</source><creator>Chiu, Chi-Hsin ; Swanson, J.G</creator><creatorcontrib>Chiu, Chi-Hsin ; Swanson, J.G</creatorcontrib><description>It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2x10 super(9) electrons/cm super(2)/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-000-0050-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Warrendale: Springer Nature B.V</publisher><ispartof>Journal of electronic materials, 2000-05, Vol.29 (5), p.591-597</ispartof><rights>Copyright Minerals, Metals & Materials Society May 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-2b76ad6ee9a121dc3f0b4a29ff94c05b70c4e3a260bc25e3b02f6eddcff39003</citedby><cites>FETCH-LOGICAL-c301t-2b76ad6ee9a121dc3f0b4a29ff94c05b70c4e3a260bc25e3b02f6eddcff39003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Chiu, Chi-Hsin</creatorcontrib><creatorcontrib>Swanson, J.G</creatorcontrib><title>Depth defined optoelectronic modulation spectroscopy</title><title>Journal of electronic materials</title><description>It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2x10 super(9) electrons/cm super(2)/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating.</description><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNpdkD1PwzAQhi0EEqXwA9giBrbAnb-SjKhQQKrE0oHNcpyzSJXGIU6G_ntcysRwOun06PS-D2O3CA8IUDxGRK1lDgBpFOTijC1QSZFjqT_P2QKExlxxoS7ZVYw7AFRY4oLJZxqmr6wh3_bUZGGYAnXkpjH0rcv2oZk7O7Whz-Lwe40uDIdrduFtF-nmby_Zdv2yXb3lm4_X99XTJncCcMp5XWjbaKLKIsfGCQ-1tLzyvpIOVF2AkyQs11A7rkjUwL2mpnHeiwpALNn96e0whu-Z4mT2bXTUdbanMEfDC1mi5jyBd__AXZjHPkUzHGSZoEInCE-QSy3iSN4MY7u348EgmKNDc3JokkNzdGiE-AEzQGTQ</recordid><startdate>20000501</startdate><enddate>20000501</enddate><creator>Chiu, Chi-Hsin</creator><creator>Swanson, J.G</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000501</creationdate><title>Depth defined optoelectronic modulation spectroscopy</title><author>Chiu, Chi-Hsin ; Swanson, J.G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-2b76ad6ee9a121dc3f0b4a29ff94c05b70c4e3a260bc25e3b02f6eddcff39003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chiu, Chi-Hsin</creatorcontrib><creatorcontrib>Swanson, J.G</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chiu, Chi-Hsin</au><au>Swanson, J.G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Depth defined optoelectronic modulation spectroscopy</atitle><jtitle>Journal of electronic materials</jtitle><date>2000-05-01</date><risdate>2000</risdate><volume>29</volume><issue>5</issue><spage>591</spage><epage>597</epage><pages>591-597</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2x10 super(9) electrons/cm super(2)/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating.</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11664-000-0050-3</doi><tpages>7</tpages></addata></record> |
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| language | eng |
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| title | Depth defined optoelectronic modulation spectroscopy |
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