On the origin of internal gettering suppression in low carbon CZ silicon by rapid thermal annealing

The influence of classic and rapid thermal annealing pretreatments under nitrogen or hydrogenated ambients on thermal donor formation and on the further oxygen nucleation step were studied. A rapid thermal annealing at 1200 degree C under a nitrogen ambient delayed the formation of thermal donors. I...

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Veröffentlicht in:	Journal of the Electrochemical Society 1995-02, Vol.142 (2), p.560-564
Hauptverfasser:	MADDALON-VINANTE, C, VALLARD, J. P, BARBIER, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Impurities: concentration, distribution, and gradients Impurity concentration, distribution, and gradients Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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