The changes of short range ordering in amorphous silicon–carbon alloys by thermal annealing

Amorphous Si 0.9C 0.1:H and Si 0.7C 0.3:H alloys were deposited by magnetron sputtering onto a non-heated substrate, using benzene vapour as a source of carbon atoms. The specimens were exposed to sequential isochronal thermal annealing, up to 1050°C, in a vacuum chamber, followed by IR and Raman sp...

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Veröffentlicht in:Thin solid films 1998-04, Vol.317 (1), p.206-209
Hauptverfasser: Gracin, D, Radić, N, Ivanda, M, Andreić, Ž, Praček, B
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Sprache:eng
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