Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers

We report on the characterization of MESFETs designed for L- and S-band power amplification and processed on 4H-SiC conductive and semi-insulating wafers. Both exhibit promising dc characteristics (I(dss) = 300mA/mm; BV(ds) is greater than 150 V). As expected, the microwave small signal performance...

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Veröffentlicht in:	Materials science forum 1998-01, Vol.264-268, p.949-952
Hauptverfasser:	Noblanc, Olivier, Arnodof, C., Chartier, E., Brylinski, Christian
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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