Metal—organic chemical vapor deposition of copper using hydrated copper formate as a new precursor

Copper films were obtained by metal-organic chemical vapour deposition using hydrated copper formate. The films were deposited on Si(100) and sputtered TiN Si(100) 4-in wafers, at substrate temperatures of about 300 °C, with a reducing or inert carrier gas. Results from X-ray diffraction and X-ray p...

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Veröffentlicht in:	Thin solid films 1995-06, Vol.262 (1), p.1-6
Hauptverfasser:	Mouche, Marie-José, Mermet, Jean-Luc, Romand, Maurice, Charbonnier, Marlène
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapour deposition Copper Mass spectroscopy Whiskers
Online-Zugang:	Volltext
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