Modeling of CrSi sub(2)-Si and MoSi sub(2)-Si Schottky barrier contacts

Modeling of CrSi sub(2)-Si and MoSi sub(2)-Si Schottky barrier contacts

Forward and reverse I-V characteristics measured on CrSi sub(2)-Si and MoSi sub(2)-Si Schottky structures were compared with simulated ones. While the CrSi sub(2)-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi sub(2)-Si exhibit the nearly ideal forw...

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Veröffentlicht in:IEEE transactions on electron devices 1995-01, Vol.42 (6), p.1187-1189
Hauptverfasser: Donoval, D, Snowden, C M, Nagl, V, Racko, J, Barus, M
Format: Artikel
Sprache:eng
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Zusammenfassung:Forward and reverse I-V characteristics measured on CrSi sub(2)-Si and MoSi sub(2)-Si Schottky structures were compared with simulated ones. While the CrSi sub(2)-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi sub(2)-Si exhibit the nearly ideal forward and reverse I-V characteristics. The used model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation-recombination theory and has the closed form.
ISSN:0018-9383