Velocity overshoot of electrons and holes in Si inversion layers

Velocity overshoot of electrons and holes in Si inversion layers

Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical mode...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solid-state electronics 1997, Vol.41 (8), p.1119-1125
Hauptverfasser: Sinitsky, D, Assaderaghi, F, Orshansky, M, Bokor, J, Hu, C
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1125
container_issue 8
container_start_page 1119
container_title Solid-state electronics
container_volume 41
creator Sinitsky, D
Assaderaghi, F
Orshansky, M
Bokor, J
Hu, C
description Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.
doi_str_mv 10.1016/S0038-1101(97)00031-2
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27414032</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038110197000312</els_id><sourcerecordid>27414032</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-55e921d679ce1955599653497a73506cc2b5aa9c2cd0024973d07717dc967d763</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKs_QchJ9LCaj82mOakUv6Dgoeo1xGRKI-mmJtvC_nuzrXj1ksyEZ14mD0LnlFxTQpubOSF8UtFSXyp5RUpHK3aARnQiVcVqIg7R6A85Ric5fxWINZSM0N0HhGh91-O4hZSXMXY4LjAEsF2KbcamdXgZA2TsWzz35Rw4H1scTF-qU3S0MCHD2e89Ru-PD2_T52r2-vQyvZ9VlvNJVwkBilHXSGWBKiGEUo3gtZJGckEaa9mnMEZZZl1ZrbxzR6Sk0lnVSCcbPkYX-9x1it8byJ1e-WwhBNNC3GTNZE1rwlkBxR60KeacYKHXya9M6jUlevCld770IEMrqXe-9DB3u5-D8outh6Sz9dBacD4VGdpF_0_CD8WIcIs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27414032</pqid></control><display><type>article</type><title>Velocity overshoot of electrons and holes in Si inversion layers</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Sinitsky, D ; Assaderaghi, F ; Orshansky, M ; Bokor, J ; Hu, C</creator><creatorcontrib>Sinitsky, D ; Assaderaghi, F ; Orshansky, M ; Bokor, J ; Hu, C</creatorcontrib><description>Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(97)00031-2</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Solid-state electronics, 1997, Vol.41 (8), p.1119-1125</ispartof><rights>1997</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-55e921d679ce1955599653497a73506cc2b5aa9c2cd0024973d07717dc967d763</citedby><cites>FETCH-LOGICAL-c338t-55e921d679ce1955599653497a73506cc2b5aa9c2cd0024973d07717dc967d763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0038-1101(97)00031-2$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,4022,27922,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Sinitsky, D</creatorcontrib><creatorcontrib>Assaderaghi, F</creatorcontrib><creatorcontrib>Orshansky, M</creatorcontrib><creatorcontrib>Bokor, J</creatorcontrib><creatorcontrib>Hu, C</creatorcontrib><title>Velocity overshoot of electrons and holes in Si inversion layers</title><title>Solid-state electronics</title><description>Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.</description><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QchJ9LCaj82mOakUv6Dgoeo1xGRKI-mmJtvC_nuzrXj1ksyEZ14mD0LnlFxTQpubOSF8UtFSXyp5RUpHK3aARnQiVcVqIg7R6A85Ric5fxWINZSM0N0HhGh91-O4hZSXMXY4LjAEsF2KbcamdXgZA2TsWzz35Rw4H1scTF-qU3S0MCHD2e89Ru-PD2_T52r2-vQyvZ9VlvNJVwkBilHXSGWBKiGEUo3gtZJGckEaa9mnMEZZZl1ZrbxzR6Sk0lnVSCcbPkYX-9x1it8byJ1e-WwhBNNC3GTNZE1rwlkBxR60KeacYKHXya9M6jUlevCld770IEMrqXe-9DB3u5-D8outh6Sz9dBacD4VGdpF_0_CD8WIcIs</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Sinitsky, D</creator><creator>Assaderaghi, F</creator><creator>Orshansky, M</creator><creator>Bokor, J</creator><creator>Hu, C</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1997</creationdate><title>Velocity overshoot of electrons and holes in Si inversion layers</title><author>Sinitsky, D ; Assaderaghi, F ; Orshansky, M ; Bokor, J ; Hu, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-55e921d679ce1955599653497a73506cc2b5aa9c2cd0024973d07717dc967d763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sinitsky, D</creatorcontrib><creatorcontrib>Assaderaghi, F</creatorcontrib><creatorcontrib>Orshansky, M</creatorcontrib><creatorcontrib>Bokor, J</creatorcontrib><creatorcontrib>Hu, C</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sinitsky, D</au><au>Assaderaghi, F</au><au>Orshansky, M</au><au>Bokor, J</au><au>Hu, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Velocity overshoot of electrons and holes in Si inversion layers</atitle><jtitle>Solid-state electronics</jtitle><date>1997</date><risdate>1997</risdate><volume>41</volume><issue>8</issue><spage>1119</spage><epage>1125</epage><pages>1119-1125</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(97)00031-2</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0038-1101
ispartof Solid-state electronics, 1997, Vol.41 (8), p.1119-1125
issn 0038-1101
1879-2405
language eng
recordid cdi_proquest_miscellaneous_27414032
source ScienceDirect Journals (5 years ago - present)
title Velocity overshoot of electrons and holes in Si inversion layers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T06%3A50%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Velocity%20overshoot%20of%20electrons%20and%20holes%20in%20Si%20inversion%20layers&rft.jtitle=Solid-state%20electronics&rft.au=Sinitsky,%20D&rft.date=1997&rft.volume=41&rft.issue=8&rft.spage=1119&rft.epage=1125&rft.pages=1119-1125&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/S0038-1101(97)00031-2&rft_dat=%3Cproquest_cross%3E27414032%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27414032&rft_id=info:pmid/&rft_els_id=S0038110197000312&rfr_iscdi=true