Transparent zinc oxide films chemically prepared from aqueous solution
Transparent ZnO films were chemically deposited on nonconductive glass from aqueous solutions containing zinc nitrate and dimethylamine-borane (DMAB) kept at 323 K. The dependence of the deposition rate of the ZnO films on the DMAB concentration was established. The deposited films were characterise...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1997, Vol.144 (1), p.L3-L5 |
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| container_title | Journal of the Electrochemical Society |
| container_volume | 144 |
| creator | IZAKI, M OMI, T |
| description | Transparent ZnO films were chemically deposited on nonconductive glass from aqueous solutions containing zinc nitrate and dimethylamine-borane (DMAB) kept at 323 K. The dependence of the deposition rate of the ZnO films on the DMAB concentration was established. The deposited films were characterised in terms of XRD patterns, thickness and optical transmission spectra. The ZnO films had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. A 0.2 micron thick ZnO film with an optical transmittance of 80% was deposited by immersion for approximately 20 min in an aqueous solution containing 0.05 mol/l zinc nitrate and 0.05 to 0.1 mol/l DMAB. 9 refs. |
| doi_str_mv | 10.1149/1.1837353 |
| format | Article |
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The dependence of the deposition rate of the ZnO films on the DMAB concentration was established. The deposited films were characterised in terms of XRD patterns, thickness and optical transmission spectra. The ZnO films had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. 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The dependence of the deposition rate of the ZnO films on the DMAB concentration was established. The deposited films were characterised in terms of XRD patterns, thickness and optical transmission spectra. The ZnO films had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. 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The dependence of the deposition rate of the ZnO films on the DMAB concentration was established. The deposited films were characterised in terms of XRD patterns, thickness and optical transmission spectra. The ZnO films had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. A 0.2 micron thick ZnO film with an optical transmittance of 80% was deposited by immersion for approximately 20 min in an aqueous solution containing 0.05 mol/l zinc nitrate and 0.05 to 0.1 mol/l DMAB. 9 refs.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1837353</doi></addata></record> |
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| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1997, Vol.144 (1), p.L3-L5 |
| issn | 0013-4651 1945-7111 |
| language | eng |
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| source | IOP Publishing Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Transparent zinc oxide films chemically prepared from aqueous solution |
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