Ferroelectric non-volatile memories for low-voltage, low-power applications

Non-volatile ferroelectric random access memories (FERAM) offer substantial advantages over conventional floating-gate electrically erasable programmable read only memory (EEPROM) and flash EEPROM devices. FERAMS can be written at high speeds (≈100 ns) and at standard supply voltages 95 V or less) w...

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Veröffentlicht in:	Thin solid films 1995-12, Vol.270 (1), p.584-588
Hauptverfasser:	Jones, R.E., Maniar, P.D., Moazzami, R., Zurcher, P., Witowski, J.Z., Lii, Y.T., Chu, P., Gillespie, S.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bismuth Capacitors Dielectrics properties Electrical properties and measurements Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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