Fabrication of lateral tunnel junctions and measurement of coulomb blockade effects
In order to operate single-electron devices at high temperatures, a fabrication process for laterally arranged double tunnel junctions is presented. The dimensions of the island can be reduced relatively easily down to the resolution limit of lithography, resulting in extremely low capacitances. The...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995-12, Vol.34 (12B), p.6956-6960 |
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| container_end_page | 6960 |
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| container_issue | 12B |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | LANGHEINRICH, W AHMED, H |
| description | In order to operate single-electron devices at high temperatures, a fabrication process for laterally arranged double tunnel junctions is presented. The dimensions of the island can be reduced relatively easily down to the resolution limit of lithography, resulting in extremely low capacitances. The basic idea of the fabrication process is a very thin metallic nanowire which is made discontinuous by means of a sharp-edged groove in the substrate. Tunnel junctions are formed at either edge of the groove, and the tunnel barrier gap can be adjusted via the depth of the groove and the deposition parameters of the metal film. Coulomb blockade was observable, which is persistent up to temperatures above 77 K. |
| doi_str_mv | 10.1143/jjap.34.6956 |
| format | Article |
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The dimensions of the island can be reduced relatively easily down to the resolution limit of lithography, resulting in extremely low capacitances. The basic idea of the fabrication process is a very thin metallic nanowire which is made discontinuous by means of a sharp-edged groove in the substrate. Tunnel junctions are formed at either edge of the groove, and the tunnel barrier gap can be adjusted via the depth of the groove and the deposition parameters of the metal film. 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The dimensions of the island can be reduced relatively easily down to the resolution limit of lithography, resulting in extremely low capacitances. The basic idea of the fabrication process is a very thin metallic nanowire which is made discontinuous by means of a sharp-edged groove in the substrate. Tunnel junctions are formed at either edge of the groove, and the tunnel barrier gap can be adjusted via the depth of the groove and the deposition parameters of the metal film. Coulomb blockade was observable, which is persistent up to temperatures above 77 K.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LANGHEINRICH, W</creatorcontrib><creatorcontrib>AHMED, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LANGHEINRICH, W</au><au>AHMED, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of lateral tunnel junctions and measurement of coulomb blockade effects</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995-12-01</date><risdate>1995</risdate><volume>34</volume><issue>12B</issue><spage>6956</spage><epage>6960</epage><pages>6956-6960</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>In order to operate single-electron devices at high temperatures, a fabrication process for laterally arranged double tunnel junctions is presented. 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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1995-12, Vol.34 (12B), p.6956-6960 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27359276 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Fabrication of lateral tunnel junctions and measurement of coulomb blockade effects |
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