Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform

Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform

In this paper, a carrier-injection electro-absorption modulator (EAM) at 2 µm is demonstrated on Ge-on-Si platform. The EAM shows a compact size and high modulation efficiency due to the strong free-carrier electroabsorption (FCEA) effect in Ge. A modulation depth of 40 dB can be obtained under the...

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Veröffentlicht in:Optics express 2022-11, Vol.30 (23), p.41943-41953
Hauptverfasser: Zhu, Yupeng, Niu, Chaoqun, Liu, Zhi, Liu, Xiangquan, Yang, Yazhou, Huang, Qinxing, Cui, Jinlai, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen
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container_end_page 41953
container_issue 23
container_start_page 41943
container_title Optics express
container_volume 30
creator Zhu, Yupeng
Niu, Chaoqun
Liu, Zhi
Liu, Xiangquan
Yang, Yazhou
Huang, Qinxing
Cui, Jinlai
Zheng, Jun
Zuo, Yuhua
Cheng, Buwen
description In this paper, a carrier-injection electro-absorption modulator (EAM) at 2 µm is demonstrated on Ge-on-Si platform. The EAM shows a compact size and high modulation efficiency due to the strong free-carrier electroabsorption (FCEA) effect in Ge. A modulation depth of 40 dB can be obtained under the injection current of only 420 mA. Small-signal frequency response measurement is performed and a small-signal equivalent circuit model is proposed. Based on reflection coefficients and equivalent circuit, the frequency response of carrier-injection EAM is discussed in detail. The 500 Mbps open eye diagram verifies the data-processing capacity of our EAM at 2 µm wavelength for its application in biological, chemical molecular detection, and infrared imaging systems.
doi_str_mv 10.1364/OE.473816
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title Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform
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