A realistic large-signal MESFET model for SPICE

A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented, It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1997-09, Vol.45 (9), p.1563-1571
Hauptverfasser:	Parker, A.E., Skellern, D.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Distortion measurement Electric breakdown Frequency Intermodulation distortion MESFETs Power dissipation SPICE Subthreshold current Transconductance
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!