Quantitative analysis of time-decay reproducible stress-induced leakage current in SiO sub(2) films

In the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, three reproducible stress-induced leakage current (SILC) components have been found for the repeated unipolar gate-voltage scans in 9.2-nm wet oxides. To clarify the mechanisms of these current components, a quantitative...

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Veröffentlicht in:	IEEE transactions on electron devices 1997-01, Vol.44 (6), p.1002-1008
Hauptverfasser:	Sakakibara, Kiyohiko, Ajika, Natsuo, Eikyu, Katsumi, Ishikawa, Kiyoshi, Miyoshi, Hirokazu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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