A physics-based, dynamic thermal impedance model for SOI MOSFET's
A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-...
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| Veröffentlicht in: | IEEE transactions on electron devices 1997-06, Vol.44 (6), p.957-964 |
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| container_end_page | 964 |
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| container_issue | 6 |
| container_start_page | 957 |
| container_title | IEEE transactions on electron devices |
| container_volume | 44 |
| creator | Brodsky, J.S. Fox, R.M. Zweidinger, D.T. Veeraraghavan, S. |
| description | A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes. |
| doi_str_mv | 10.1109/16.585551 |
| format | Article |
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This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.585551</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit simulation ; Electrothermal effects ; Impedance ; MOSFET circuits ; Parameter extraction ; Software packages ; Steady-state ; Thermal conductivity ; Thermal resistance ; Transient analysis</subject><ispartof>IEEE transactions on electron devices, 1997-06, Vol.44 (6), p.957-964</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-1b7b6a140e1483eb5de8d10cb08c6bebe316de28af5e7e213dfd3c846de13d593</citedby><cites>FETCH-LOGICAL-c308t-1b7b6a140e1483eb5de8d10cb08c6bebe316de28af5e7e213dfd3c846de13d593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/585551$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/585551$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Brodsky, J.S.</creatorcontrib><creatorcontrib>Fox, R.M.</creatorcontrib><creatorcontrib>Zweidinger, D.T.</creatorcontrib><creatorcontrib>Veeraraghavan, S.</creatorcontrib><title>A physics-based, dynamic thermal impedance model for SOI MOSFET's</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes.</description><subject>Circuit simulation</subject><subject>Electrothermal effects</subject><subject>Impedance</subject><subject>MOSFET circuits</subject><subject>Parameter extraction</subject><subject>Software packages</subject><subject>Steady-state</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>Transient analysis</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqN0DtPwzAQB3ALgUQpDKxMnkBIpPjiR5yxqnhUKupQmC0_LmpQ0gS7DP32BKViZrq7__10wxFyDWwGwMpHUDOppZRwQiYgZZGVSqhTMmEMdFZyzc_JRUqfw6iEyCdkPqf99pBqnzJnE4YHGg4729ae7rcYW9vQuu0x2J1H2nYBG1p1kW7WS_q23jw_vd-lS3JW2Sbh1bFOyceQL16z1fpluZivMs-Z3mfgCqcsCIYgNEcnA-oAzDumvXLokIMKmGtbSSwwBx6qwL0WQzj0suRTcjve7WP39Y1pb9o6eWwau8PuO5lcS-C5-Acscg2g9QDvR-hjl1LEyvSxbm08GGDm95sGlBm_Odib0daI-OeOyx8r7m3J</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>Brodsky, J.S.</creator><creator>Fox, R.M.</creator><creator>Zweidinger, D.T.</creator><creator>Veeraraghavan, S.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19970601</creationdate><title>A physics-based, dynamic thermal impedance model for SOI MOSFET's</title><author>Brodsky, J.S. ; Fox, R.M. ; Zweidinger, D.T. ; Veeraraghavan, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-1b7b6a140e1483eb5de8d10cb08c6bebe316de28af5e7e213dfd3c846de13d593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Circuit simulation</topic><topic>Electrothermal effects</topic><topic>Impedance</topic><topic>MOSFET circuits</topic><topic>Parameter extraction</topic><topic>Software packages</topic><topic>Steady-state</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>Transient analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brodsky, J.S.</creatorcontrib><creatorcontrib>Fox, R.M.</creatorcontrib><creatorcontrib>Zweidinger, D.T.</creatorcontrib><creatorcontrib>Veeraraghavan, S.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brodsky, J.S.</au><au>Fox, R.M.</au><au>Zweidinger, D.T.</au><au>Veeraraghavan, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A physics-based, dynamic thermal impedance model for SOI MOSFET's</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1997-06-01</date><risdate>1997</risdate><volume>44</volume><issue>6</issue><spage>957</spage><epage>964</epage><pages>957-964</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A physics-based compact analytical expression for the thermal impedance of SOI MOSFET's is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes.</abstract><pub>IEEE</pub><doi>10.1109/16.585551</doi><tpages>8</tpages></addata></record> |
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| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuit simulation Electrothermal effects Impedance MOSFET circuits Parameter extraction Software packages Steady-state Thermal conductivity Thermal resistance Transient analysis |
| title | A physics-based, dynamic thermal impedance model for SOI MOSFET's |
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