Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions

The strong polarization-induced electric field in the multi-quantum well region reduces the radiative recombination rates by separating the electron and hole wave functions, which is one of the most detrimental factors that is to blame for the low luminous efficiency of AlGaN deep-ultraviolet light-...

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Veröffentlicht in:	Applied optics (2004) 2022-08, Vol.61 (24), p.6961-6966
Hauptverfasser:	Ji, Yongchen, Liu, Mengran, Liu, Chao
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping Electric fields Electrical junctions Light emitting diodes Luminous efficacy Mathematical analysis Multi Quantum Wells P-i-n junctions Polarization Quantum efficiency Radiative recombination Ultraviolet radiation Wave functions
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