Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts

An investigation of metallic polypyrrole polymer (MPP)/ n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the...

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Veröffentlicht in:	Microelectronic engineering 2000, Vol.51, p.689-693
Hauptverfasser:	Abay, B, Onganer, Y, Saǧlam, M, Efeoǧlu, H, Türüt, A, Yoǧurtçu, Y.K
Format:	Artikel
Sprache:	eng
Schlagworte:	Layered crystals Polymer Schottky contacts
Online-Zugang:	Volltext
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