Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts
An investigation of metallic polypyrrole polymer (MPP)/ n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the...
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| Veröffentlicht in: | Microelectronic engineering 2000, Vol.51, p.689-693 |
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| container_title | Microelectronic engineering |
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| creator | Abay, B Onganer, Y Saǧlam, M Efeoǧlu, H Türüt, A Yoǧurtçu, Y.K |
| description | An investigation of metallic polypyrrole polymer (MPP)/
n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved
n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the
n-InSe(:Er) semiconductor. The current–voltage (
I–
V) and capacitance–voltage (
C–
V) characteristics of the diode have been determined at room temperature. The diode shows nonideal
I–
V behavior with an ideality factor greater than one. In addition, the
I–
V characteristics of the (MPP)/
n-InSe(:Er) device shows an improvement with an increased
Φ
b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias
C
−2–
V characteristics of the diode shows a non-linear behavior. |
| doi_str_mv | 10.1016/S0167-9317(99)00532-8 |
| format | Article |
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n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved
n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the
n-InSe(:Er) semiconductor. The current–voltage (
I–
V) and capacitance–voltage (
C–
V) characteristics of the diode have been determined at room temperature. The diode shows nonideal
I–
V behavior with an ideality factor greater than one. In addition, the
I–
V characteristics of the (MPP)/
n-InSe(:Er) device shows an improvement with an increased
Φ
b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias
C
−2–
V characteristics of the diode shows a non-linear behavior.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/S0167-9317(99)00532-8</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Layered crystals ; Polymer ; Schottky contacts</subject><ispartof>Microelectronic engineering, 2000, Vol.51, p.689-693</ispartof><rights>2000 Elsevier Science B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-fe9b7824c02a4d2c63e449a407aefa97c74dc7acaf78995ca8c16bb691aab73a3</citedby><cites>FETCH-LOGICAL-c338t-fe9b7824c02a4d2c63e449a407aefa97c74dc7acaf78995ca8c16bb691aab73a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0167-9317(99)00532-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Abay, B</creatorcontrib><creatorcontrib>Onganer, Y</creatorcontrib><creatorcontrib>Saǧlam, M</creatorcontrib><creatorcontrib>Efeoǧlu, H</creatorcontrib><creatorcontrib>Türüt, A</creatorcontrib><creatorcontrib>Yoǧurtçu, Y.K</creatorcontrib><title>Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts</title><title>Microelectronic engineering</title><description>An investigation of metallic polypyrrole polymer (MPP)/
n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved
n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the
n-InSe(:Er) semiconductor. The current–voltage (
I–
V) and capacitance–voltage (
C–
V) characteristics of the diode have been determined at room temperature. The diode shows nonideal
I–
V behavior with an ideality factor greater than one. In addition, the
I–
V characteristics of the (MPP)/
n-InSe(:Er) device shows an improvement with an increased
Φ
b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias
C
−2–
V characteristics of the diode shows a non-linear behavior.</description><subject>Layered crystals</subject><subject>Polymer</subject><subject>Schottky contacts</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkE1KBDEQhYMoOP4cQeiV6KI13Ul3Ejcig38guBhdh5rqao32dMYkI8zOO3hDT2LriLhzU0VR7z14H2N7BT8qeFEfT4ahciMKdWDMIeeVKHO9xkaFViKvqlqvs9GvZJNtxfjEh1tyPWLP40UI1KePt_dX3yV4oAz6JkOYA7oEPdKfDz5CAEwUXEwOY-bbbEYJus5hNvfdckbh-Lqf0MHJeTjMJvjoU3peZuj7NNjiDttooYu0-7O32f3F-d34Kr-5vbwen93kKIROeUtmqnQpkZcgmxJrQVIakFwBtWAUKtmgAoRWaWMqBI1FPZ3WpgCYKgFim-2vcufBvywoJjtzEanroCe_iLZUpRRS1YOwWgkx-BgDtXYe3AzC0hbcfqG132jtFzdrjP1Ga_XgO135aGjx6ijYiI4GVo0LhMk23v2T8AkyVYV0</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Abay, B</creator><creator>Onganer, Y</creator><creator>Saǧlam, M</creator><creator>Efeoǧlu, H</creator><creator>Türüt, A</creator><creator>Yoǧurtçu, Y.K</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2000</creationdate><title>Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts</title><author>Abay, B ; Onganer, Y ; Saǧlam, M ; Efeoǧlu, H ; Türüt, A ; Yoǧurtçu, Y.K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-fe9b7824c02a4d2c63e449a407aefa97c74dc7acaf78995ca8c16bb691aab73a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Layered crystals</topic><topic>Polymer</topic><topic>Schottky contacts</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abay, B</creatorcontrib><creatorcontrib>Onganer, Y</creatorcontrib><creatorcontrib>Saǧlam, M</creatorcontrib><creatorcontrib>Efeoǧlu, H</creatorcontrib><creatorcontrib>Türüt, A</creatorcontrib><creatorcontrib>Yoǧurtçu, Y.K</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abay, B</au><au>Onganer, Y</au><au>Saǧlam, M</au><au>Efeoǧlu, H</au><au>Türüt, A</au><au>Yoǧurtçu, Y.K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts</atitle><jtitle>Microelectronic engineering</jtitle><date>2000</date><risdate>2000</risdate><volume>51</volume><spage>689</spage><epage>693</epage><pages>689-693</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>An investigation of metallic polypyrrole polymer (MPP)/
n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved
n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the
n-InSe(:Er) semiconductor. The current–voltage (
I–
V) and capacitance–voltage (
C–
V) characteristics of the diode have been determined at room temperature. The diode shows nonideal
I–
V behavior with an ideality factor greater than one. In addition, the
I–
V characteristics of the (MPP)/
n-InSe(:Er) device shows an improvement with an increased
Φ
b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias
C
−2–
V characteristics of the diode shows a non-linear behavior.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0167-9317(99)00532-8</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2000, Vol.51, p.689-693 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27243476 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Layered crystals Polymer Schottky contacts |
| title | Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts |
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