Current filamentation in bipolar power devices during dynamic avalanche breakdown

High voltage, high power bipolar devices like diodes or GTOs exhibit a limited safe operating area (SOA). During turn-off or reverse recovery the maximum permissible losses remain well below values which could trigger thermal runaway. Up to now the limiting destruction mechanism is not understood. 2...

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Veröffentlicht in:	Solid-state electronics 2000, Vol.44 (1), p.117-123
Hauptverfasser:	Oetjen, J, Jungblut, R, Kuhlmann, U, Arkenau, J, Sittig, R
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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