Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering

The crystalline structure, thermal stability, and electrical properties of TaN and TaSiN thin films formed by reactive RF-sputtering with a broad range of N and Si composition ratios were investigated. TaSiN with a Si/(Si+Ta) ratio less than 25% were crystalline, whereas that with a ratio more than...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000, Vol.39 (3R), p.1291-1294
Hauptverfasser:	Oizumi, Munenori, Aoki, Katsuhiro, Hashimoto, Satoshi, Nemoto, Satoru, Fukuda, Yukio
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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