Indium diffusion study in α-titanium

Indium diffusion study in α-titanium

The diffusion of implanted In α-Ti has been studied in the 823–1073 K temperature range by using the Rutherford backscattering spectrometry (RBS) technique. The measurements show that the diffusion coefficients follow a linear Arrhenius plot: D( T) = (2.0 ± 1.3) × 10 −6exp[−(260 ± 40) kJ/mol/ RT]m 2...

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Veröffentlicht in:Journal of nuclear materials 1997-09, Vol.249 (1), p.52-57
Hauptverfasser: Pérez, R.A., Soares, M.R.F., Behar, M., Dyment, F.
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container_title Journal of nuclear materials
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creator Pérez, R.A.
Soares, M.R.F.
Behar, M.
Dyment, F.
description The diffusion of implanted In α-Ti has been studied in the 823–1073 K temperature range by using the Rutherford backscattering spectrometry (RBS) technique. The measurements show that the diffusion coefficients follow a linear Arrhenius plot: D( T) = (2.0 ± 1.3) × 10 −6exp[−(260 ± 40) kJ/mol/ RT]m 2 s −1. The diffusion parameters D 0 and Q are typical of a normal substitutional behavior. Comparison of the present and previous published results of impurity diffusion in α-Ti does not show evidence for mass or size effects in the diffusion mechanism.
doi_str_mv 10.1016/S0022-3115(97)00181-5
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title Indium diffusion study in α-titanium
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