A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor

Defect evaluation of SiC wafers can be accomplished by potassium hydroxide (KOH) etching. The method described in this work employs etching by KOH in a vapor phase rather than in a liquid phase and this method allows reliable etching of both Si- and C-faces and furthermore it allows the delineation...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 12), p.7312-7316
Hauptverfasser:	Bondokov, Robert T., Khlebnikov, Igor I., Lashkov, Tsanko, Tupitsyn, Eugene, Stratiy, Georgiy, Khlebnikov, Yuri, Sudarshan, Tangali S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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