OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS

OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS

Triple-period-A (TP-A) type ordering of atoms has been observed in Sb-doped Ga0.5In0.5P grown by metal-organic VPE on (001)GaAs at approx 650 C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of (2 x 3) surfac...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000 Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000, 2000, Vol.39 (2B), p.L126-L128
Hauptverfasser: Ichihashi, T, Kurihara, K, Nishi, K, Suzuki, T
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page L128
container_issue 2B
container_start_page L126
container_title Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000
container_volume 39
creator Ichihashi, T
Kurihara, K
Nishi, K
Suzuki, T
description Triple-period-A (TP-A) type ordering of atoms has been observed in Sb-doped Ga0.5In0.5P grown by metal-organic VPE on (001)GaAs at approx 650 C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of (2 x 3) surface reconstruction with double Sb-rich-group-V-surface-layers during growth, due to the antimony's low vapor pressure. Sb constituted as little as 1.6% of the atoms in the group-V sublattice. A peculiar characteristic in the pattern of the diffuse scattering from Sb-doped Ga0.5In0.5P was interpreted to result from the novel orientation of the shallow disk-shaped domains of TP-A type ordering. 15 refs.
doi_str_mv 10.1143/jjap.39.l126
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_27222242</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27222242</sourcerecordid><originalsourceid>FETCH-LOGICAL-j332t-4b2534b46651612f682194488efb54cf261793579e7a07145015354e9ab342783</originalsourceid><addsrcrecordid>eNotjEFPgzAYhnvQxDm9-QN68lakX7-29IjAsAlSAmiy0wJLSSS4Tdn-_0j0PbxP3ufwEvLEw4BzFC_j2J0CYYKJg7ohqzAEztAA3JH7eR6XqSTyFanda5PVn3FrXUndhra1rYqMVVltXcpi2m6rjMate7cJdXW66DKntqRNz1JXZSnNuzCQ9rBUReOicNvmgdwO3TT7x3-uyccma5M3VrjcJnHBRiHgzLAHKbBHpSRXHAYVATeIUeSHXuJ-AMW1EVIbr7tQc5Qhl0KiN10vEHQk1uT57_f0e_y5-Pm8-_6a936auoM_XuYdaFiCIK6FBUcM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27222242</pqid></control><display><type>article</type><title>OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS</title><source>Institute of Physics Journals</source><creator>Ichihashi, T ; Kurihara, K ; Nishi, K ; Suzuki, T</creator><creatorcontrib>Ichihashi, T ; Kurihara, K ; Nishi, K ; Suzuki, T</creatorcontrib><description>Triple-period-A (TP-A) type ordering of atoms has been observed in Sb-doped Ga0.5In0.5P grown by metal-organic VPE on (001)GaAs at approx 650 C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of (2 x 3) surface reconstruction with double Sb-rich-group-V-surface-layers during growth, due to the antimony's low vapor pressure. Sb constituted as little as 1.6% of the atoms in the group-V sublattice. A peculiar characteristic in the pattern of the diffuse scattering from Sb-doped Ga0.5In0.5P was interpreted to result from the novel orientation of the shallow disk-shaped domains of TP-A type ordering. 15 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>DOI: 10.1143/jjap.39.l126</identifier><language>eng</language><ispartof>Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000, 2000, Vol.39 (2B), p.L126-L128</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009,27902,27903,27904</link.rule.ids></links><search><creatorcontrib>Ichihashi, T</creatorcontrib><creatorcontrib>Kurihara, K</creatorcontrib><creatorcontrib>Nishi, K</creatorcontrib><creatorcontrib>Suzuki, T</creatorcontrib><title>OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS</title><title>Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000</title><description>Triple-period-A (TP-A) type ordering of atoms has been observed in Sb-doped Ga0.5In0.5P grown by metal-organic VPE on (001)GaAs at approx 650 C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of (2 x 3) surface reconstruction with double Sb-rich-group-V-surface-layers during growth, due to the antimony's low vapor pressure. Sb constituted as little as 1.6% of the atoms in the group-V sublattice. A peculiar characteristic in the pattern of the diffuse scattering from Sb-doped Ga0.5In0.5P was interpreted to result from the novel orientation of the shallow disk-shaped domains of TP-A type ordering. 15 refs.</description><issn>0021-4922</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotjEFPgzAYhnvQxDm9-QN68lakX7-29IjAsAlSAmiy0wJLSSS4Tdn-_0j0PbxP3ufwEvLEw4BzFC_j2J0CYYKJg7ohqzAEztAA3JH7eR6XqSTyFanda5PVn3FrXUndhra1rYqMVVltXcpi2m6rjMate7cJdXW66DKntqRNz1JXZSnNuzCQ9rBUReOicNvmgdwO3TT7x3-uyccma5M3VrjcJnHBRiHgzLAHKbBHpSRXHAYVATeIUeSHXuJ-AMW1EVIbr7tQc5Qhl0KiN10vEHQk1uT57_f0e_y5-Pm8-_6a936auoM_XuYdaFiCIK6FBUcM</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Ichihashi, T</creator><creator>Kurihara, K</creator><creator>Nishi, K</creator><creator>Suzuki, T</creator><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>2000</creationdate><title>OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS</title><author>Ichihashi, T ; Kurihara, K ; Nishi, K ; Suzuki, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j332t-4b2534b46651612f682194488efb54cf261793579e7a07145015354e9ab342783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ichihashi, T</creatorcontrib><creatorcontrib>Kurihara, K</creatorcontrib><creatorcontrib>Nishi, K</creatorcontrib><creatorcontrib>Suzuki, T</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ichihashi, T</au><au>Kurihara, K</au><au>Nishi, K</au><au>Suzuki, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS</atitle><jtitle>Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000</jtitle><date>2000</date><risdate>2000</risdate><volume>39</volume><issue>2B</issue><spage>L126</spage><epage>L128</epage><pages>L126-L128</pages><issn>0021-4922</issn><abstract>Triple-period-A (TP-A) type ordering of atoms has been observed in Sb-doped Ga0.5In0.5P grown by metal-organic VPE on (001)GaAs at approx 650 C. The appearance of TP-A type ordering at such a high temperature with a very low flow-rate for Sb is believed to result from the formation of (2 x 3) surface reconstruction with double Sb-rich-group-V-surface-layers during growth, due to the antimony's low vapor pressure. Sb constituted as little as 1.6% of the atoms in the group-V sublattice. A peculiar characteristic in the pattern of the diffuse scattering from Sb-doped Ga0.5In0.5P was interpreted to result from the novel orientation of the shallow disk-shaped domains of TP-A type ordering. 15 refs.</abstract><doi>10.1143/jjap.39.l126</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 2B, pp. L126-L128. 2000, 2000, Vol.39 (2B), p.L126-L128
issn 0021-4922
language eng
recordid cdi_proquest_miscellaneous_27222242
source Institute of Physics Journals
title OBSERVATION OF TRIPLE-PERIOD-A TYPE ATOMIC ORDERING IN Sb-DOPED Ga0.5In0.5P ALLOYS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T09%3A04%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=OBSERVATION%20OF%20TRIPLE-PERIOD-A%20TYPE%20ATOMIC%20ORDERING%20IN%20Sb-DOPED%20Ga0.5In0.5P%20ALLOYS&rft.jtitle=Jpn.J.Appl.Phys%20,Part%202.%20Vol.%2039,%20no.%202B,%20pp.%20L126-L128.%202000&rft.au=Ichihashi,%20T&rft.date=2000&rft.volume=39&rft.issue=2B&rft.spage=L126&rft.epage=L128&rft.pages=L126-L128&rft.issn=0021-4922&rft_id=info:doi/10.1143/jjap.39.l126&rft_dat=%3Cproquest%3E27222242%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27222242&rft_id=info:pmid/&rfr_iscdi=true