Large area MSM photodiode array for 0.85 mu m wavelength 10 Gbit/s per channel parallel optical links

A 1 x 12 metal-semiconductor-metal (MSM) photodiode array operating at 10 Gbit/s per channel was developed for short-haul 0.85 mu m wavelength parallel optical links. The GaAs-based MSM photodiodes with a diameter of 80 mu m have a responsivity of 0.30 A/W at 3 V, a dark current of less than 1 nA at...

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Veröffentlicht in:Electronics letters 2002-08, Vol.38 (18), p.1051-1052
Hauptverfasser: Hurm, V, Bronner, W, Benz, W, Kohler, K, Kropp, J-R, Losch, R, Ludwig, M, Mann, G, Mikulla, M, Rosenzweig, J, Schlechtweg, M, Walther, M, Weimann, G
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container_end_page 1052
container_issue 18
container_start_page 1051
container_title Electronics letters
container_volume 38
creator Hurm, V
Bronner, W
Benz, W
Kohler, K
Kropp, J-R
Losch, R
Ludwig, M
Mann, G
Mikulla, M
Rosenzweig, J
Schlechtweg, M
Walther, M
Weimann, G
description A 1 x 12 metal-semiconductor-metal (MSM) photodiode array operating at 10 Gbit/s per channel was developed for short-haul 0.85 mu m wavelength parallel optical links. The GaAs-based MSM photodiodes with a diameter of 80 mu m have a responsivity of 0.30 A/W at 3 V, a dark current of less than 1 nA at 3 V, a capacitance of 0.20 pF at 1 MHz, and a -3 dB bandwidth of 10 GHz at (2.5 V, 50 Omega ).
doi_str_mv 10.1049/el:20020660
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title Large area MSM photodiode array for 0.85 mu m wavelength 10 Gbit/s per channel parallel optical links
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