Transparent conductive ITO thin films through the sol-gel process using metal salts
The electrical and optical properties, structure and morphology of ITO thin films were investigated. Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on soda-lime-silicate glass substrate by the sol-gel spin coating method using inorganic metal salts. All layers studied with a t...
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| Veröffentlicht in: | Thin solid films 1999-06, Vol.347 (1), p.155-160 |
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| creator | Kim, Seon-Soon Choi, Se-Young Park, Chan-Gyung Jin, Hyeon-Woo |
| description | The electrical and optical properties, structure and morphology of ITO thin films were investigated. Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on soda-lime-silicate glass substrate by the sol-gel spin coating method using inorganic metal salts. All layers studied with a thickness range of 50–350 nm were polycrystalline with grain sizes in the range 20–30 nm depending on the annealing conditions. SnO or SnO
2 phase was not detected in terms of XRD, TEM analysis techniques and the resultant phase was only In
2O
3 cubic bixbyite. The sheet resistance of 250 nm thin films annealed at 400°C was 6.18×10
3 Ω/□ in air, 1.09×10
3 Ω/□ in nitrogen, 15.21×10
3 Ω/□ in oxygen, respectively. Four-hundred degree centigrade-annealed 150 nm films showed more than 85% of the average visible transmittance, regardless of annealing atmospheres. According to AFM analysis RMS roughness was 18 Å for a 50 nm film and 25 Å for a 350 nm film, respectively. XPS results revealed that Sn was incorporated into In
2O
3 structure substitutionally. |
| doi_str_mv | 10.1016/S0040-6090(98)01748-9 |
| format | Article |
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2 phase was not detected in terms of XRD, TEM analysis techniques and the resultant phase was only In
2O
3 cubic bixbyite. The sheet resistance of 250 nm thin films annealed at 400°C was 6.18×10
3 Ω/□ in air, 1.09×10
3 Ω/□ in nitrogen, 15.21×10
3 Ω/□ in oxygen, respectively. Four-hundred degree centigrade-annealed 150 nm films showed more than 85% of the average visible transmittance, regardless of annealing atmospheres. According to AFM analysis RMS roughness was 18 Å for a 50 nm film and 25 Å for a 350 nm film, respectively. XPS results revealed that Sn was incorporated into In
2O
3 structure substitutionally.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(98)01748-9</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Electrical and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Indium tin oxide (ITO) ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Low-field transport and mobility; piezoresistance ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other nonmetallic inorganics ; Other nonmetals ; Physics ; Sol-gel ; Structure and morphology ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Visible and ultraviolet spectra</subject><ispartof>Thin solid films, 1999-06, Vol.347 (1), p.155-160</ispartof><rights>1999 Elsevier Science S.A.</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-a4a6bc0db21653b4b39a32426db7f9c5f1d995ababa248ab3678c41046955ba3</citedby><cites>FETCH-LOGICAL-c433t-a4a6bc0db21653b4b39a32426db7f9c5f1d995ababa248ab3678c41046955ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(98)01748-9$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1866299$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Seon-Soon</creatorcontrib><creatorcontrib>Choi, Se-Young</creatorcontrib><creatorcontrib>Park, Chan-Gyung</creatorcontrib><creatorcontrib>Jin, Hyeon-Woo</creatorcontrib><title>Transparent conductive ITO thin films through the sol-gel process using metal salts</title><title>Thin solid films</title><description>The electrical and optical properties, structure and morphology of ITO thin films were investigated. Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on soda-lime-silicate glass substrate by the sol-gel spin coating method using inorganic metal salts. All layers studied with a thickness range of 50–350 nm were polycrystalline with grain sizes in the range 20–30 nm depending on the annealing conditions. SnO or SnO
2 phase was not detected in terms of XRD, TEM analysis techniques and the resultant phase was only In
2O
3 cubic bixbyite. The sheet resistance of 250 nm thin films annealed at 400°C was 6.18×10
3 Ω/□ in air, 1.09×10
3 Ω/□ in nitrogen, 15.21×10
3 Ω/□ in oxygen, respectively. Four-hundred degree centigrade-annealed 150 nm films showed more than 85% of the average visible transmittance, regardless of annealing atmospheres. According to AFM analysis RMS roughness was 18 Å for a 50 nm film and 25 Å for a 350 nm film, respectively. XPS results revealed that Sn was incorporated into In
2O
3 structure substitutionally.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electrical and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Indium tin oxide (ITO)</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other nonmetallic inorganics</subject><subject>Other nonmetals</subject><subject>Physics</subject><subject>Sol-gel</subject><subject>Structure and morphology</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Visible and ultraviolet spectra</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLw0AQgBdRsFZ_grAHET1E95VN9iRSfBQKPTT3ZbPZtCvbpO4kBf-9SSt6lDnMHL55fQhdU_JACZWPK0IESSRR5E7l94RmIk_UCZrQPFMJyzg9RZNf5BxdAHwQQihjfIJWRTQN7Ex0TYdt21S97fze4XmxxN3GN7j2YQtDGdt-vRmyw9CGZO0C3sXWOgDcg2_WeOs6EzCY0MElOqtNAHf1k6eoeH0pZu_JYvk2nz0vEis47xIjjCwtqUpGZcpLUXJlOBNMVmVWK5vWtFIqNeUQTOSm5DLLraBESJWmpeFTdHscOxzy2Tvo9NaDdSGYxrU9aJZRpahUA5geQRtbgOhqvYt-a-KXpkSPBvXBoB71aJXrg0E99t38LDBgTagHU9bDX3MuJVMj9nTE3PDr3ruowXrXWFf56Gynq9b_s-gbh3eFmA</recordid><startdate>19990622</startdate><enddate>19990622</enddate><creator>Kim, Seon-Soon</creator><creator>Choi, Se-Young</creator><creator>Park, Chan-Gyung</creator><creator>Jin, Hyeon-Woo</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19990622</creationdate><title>Transparent conductive ITO thin films through the sol-gel process using metal salts</title><author>Kim, Seon-Soon ; Choi, Se-Young ; Park, Chan-Gyung ; Jin, Hyeon-Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c433t-a4a6bc0db21653b4b39a32426db7f9c5f1d995ababa248ab3678c41046955ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electrical and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Indium tin oxide (ITO)</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other nonmetallic inorganics</topic><topic>Other nonmetals</topic><topic>Physics</topic><topic>Sol-gel</topic><topic>Structure and morphology</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Visible and ultraviolet spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Seon-Soon</creatorcontrib><creatorcontrib>Choi, Se-Young</creatorcontrib><creatorcontrib>Park, Chan-Gyung</creatorcontrib><creatorcontrib>Jin, Hyeon-Woo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Seon-Soon</au><au>Choi, Se-Young</au><au>Park, Chan-Gyung</au><au>Jin, Hyeon-Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent conductive ITO thin films through the sol-gel process using metal salts</atitle><jtitle>Thin solid films</jtitle><date>1999-06-22</date><risdate>1999</risdate><volume>347</volume><issue>1</issue><spage>155</spage><epage>160</epage><pages>155-160</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The electrical and optical properties, structure and morphology of ITO thin films were investigated. Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on soda-lime-silicate glass substrate by the sol-gel spin coating method using inorganic metal salts. All layers studied with a thickness range of 50–350 nm were polycrystalline with grain sizes in the range 20–30 nm depending on the annealing conditions. SnO or SnO
2 phase was not detected in terms of XRD, TEM analysis techniques and the resultant phase was only In
2O
3 cubic bixbyite. The sheet resistance of 250 nm thin films annealed at 400°C was 6.18×10
3 Ω/□ in air, 1.09×10
3 Ω/□ in nitrogen, 15.21×10
3 Ω/□ in oxygen, respectively. Four-hundred degree centigrade-annealed 150 nm films showed more than 85% of the average visible transmittance, regardless of annealing atmospheres. According to AFM analysis RMS roughness was 18 Å for a 50 nm film and 25 Å for a 350 nm film, respectively. XPS results revealed that Sn was incorporated into In
2O
3 structure substitutionally.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(98)01748-9</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Indium tin oxide (ITO) Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Low-field transport and mobility piezoresistance Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetallic inorganics Other nonmetals Physics Sol-gel Structure and morphology Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Visible and ultraviolet spectra |
| title | Transparent conductive ITO thin films through the sol-gel process using metal salts |
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