Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC

In order to measure the ionization time constants of dopants in 4H /6H-SiC within a wide range of temperature, nitrogen (N), aluminum (Al), and boron (B) have been characterized using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). The temperature extrapolation of...

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Veröffentlicht in:	Journal of Electronic Materials 1999-03, Vol.28 (3), p.154-160
Hauptverfasser:	Kaindl, W, Lades, M, Kaminski, N, Niemann, E, Wachutka, G
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ADDITIONS BORON ADDITIONS DOPED MATERIALS ELECTRICAL PROPERTIES ENGINEERING NOT INCLUDED IN OTHER CATEGORIES FINITE ELEMENT METHOD MATERIALS SCIENCE NITROGEN ADDITIONS SEMICONDUCTOR DEVICES SILICON CARBIDES SIMULATION SPECTROSCOPY
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