ULTRAVIOLET PHOTON INDUCED BULK, SURFACE AND INTERFACE MODIFICATIONS IN n-Hg0.8Cd0.2Te IN HYDROGEN ENVIRONMENT

ULTRAVIOLET PHOTON INDUCED BULK, SURFACE AND INTERFACE MODIFICATIONS IN n-Hg0.8Cd0.2Te IN HYDROGEN ENVIRONMENT

Uv photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a H environment. The shift of the absorption edge towards the short wavelength side and the enhancement...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 7A, pp. 4500-4502. 2002 Part 1. Vol. 41, no. 7A, pp. 4500-4502. 2002, 2002, Vol.41 (7A), p.4500-4502
Hauptverfasser: Agnihotri, O P, Pal, R, Yang, K, Bae, S-H, Lee, S-J, Lee, M-Y
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Uv photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a H environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a lowering of the interface charges. AFM profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation. 15 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.4500