3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications

3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications

A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency, and a third-order intermodulation distor...

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Veröffentlicht in:Electronics letters 2000-02, Vol.36 (3), p.262-264
Hauptverfasser: Lee, Jong-Lam, Kim, Jong Kyu, Choi, Kyoung Jin, Yoo, Hyung Mo
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container_title Electronics letters
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creator Lee, Jong-Lam
Kim, Jong Kyu
Choi, Kyoung Jin
Yoo, Hyung Mo
description A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency, and a third-order intermodulation distortion level of -30.7dBc under single-voltage operation with a 3.3V drain voltage and 1.6GHz frequency. The power density is the highest among those reported for power devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel.
doi_str_mv 10.1049/el:20000228
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title 3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications
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