Electrical properties of TiSi sub(2) clusters in poly Si

Clusters of TiSi sub(2) were formed in a polysilicon matrix by thermal annealing of a Ti-Si multilayer structure. The silicide grain size was varied by suitable thermal treatments. The DC electrical resistivity of the composite material has been measured in the 4-500 K temperature range by van der P...

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Veröffentlicht in:Microelectronic engineering 2002-10, Vol.64 (1-4), p.197-204
Hauptverfasser: Alessandrino, M S, Bongiorno, C, La Via, F, Spinella, C, Grimaldi, M G, Piro, Alberto M
Format: Artikel
Sprache:eng
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