Ostwald ripening of Pd particles on the (101̄2̄) surface of sapphire
Morphological changes of small Pd particles on the (101̄2̄) surface of α-Al 2O 3 single crystal were investigated by Auger electron spectroscopy in the temperature range 833–923 K. It was shown that practically there was no decrease of the effective thickness during heat treatments under 6×10 −9 mba...
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Veröffentlicht in: | Surface science 1999-10, Vol.441 (1), p.133-139 |
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container_title | Surface science |
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creator | Imre, Á. Gontier-Moya, E. Beke, D.L. Szabó, I.A. Erdélyi, G. |
description | Morphological changes of small Pd particles on the (101̄2̄) surface of α-Al
2O
3 single crystal were investigated by Auger electron spectroscopy in the temperature range 833–923
K. It was shown that practically there was no decrease of the effective thickness during heat treatments under 6×10
−9
mbar. Supposing that the observed change in the Auger intensities is due to the surface Ostwald ripening, it was established that the process was controlled by surface diffusion. It was shown that in this case, taking into account the dissolution of small particles, the normalised Auger intensity is inversely proportional to the normalised average radius. The surface mass transport diffusion coefficients were determined and they were in the range 10
−15–10
−17
m
2
s
−1 in the investigated temperature interval. Their temperature dependence can be given as
D
s
′=
6
+486
−5.93
×10
−5
exp{[−(203±30)
kJ
mol
−1]/RT}
m
2
s
−1
. |
doi_str_mv | 10.1016/S0039-6028(99)00845-6 |
format | Article |
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2O
3 single crystal were investigated by Auger electron spectroscopy in the temperature range 833–923
K. It was shown that practically there was no decrease of the effective thickness during heat treatments under 6×10
−9
mbar. Supposing that the observed change in the Auger intensities is due to the surface Ostwald ripening, it was established that the process was controlled by surface diffusion. It was shown that in this case, taking into account the dissolution of small particles, the normalised Auger intensity is inversely proportional to the normalised average radius. The surface mass transport diffusion coefficients were determined and they were in the range 10
−15–10
−17
m
2
s
−1 in the investigated temperature interval. Their temperature dependence can be given as
D
s
′=
6
+486
−5.93
×10
−5
exp{[−(203±30)
kJ
mol
−1]/RT}
m
2
s
−1
.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/S0039-6028(99)00845-6</identifier><identifier>CODEN: SUSCAS</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Applied sciences ; Auger electron spectroscopy ; Condensed matter: structure, mechanical and thermal properties ; Diffusion; interface formation ; Exact sciences and technology ; Low index single crystal surfaces ; Metals. Metallurgy ; Metal–semiconductor nonmagnetic thin film structures ; Palladium ; Physics ; Solid surfaces and solid-solid interfaces ; Solid–gas interfaces ; Surface diffusion ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Surface science, 1999-10, Vol.441 (1), p.133-139</ispartof><rights>1999 Elsevier Science B.V.</rights><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-2cdfadf0ec0f98617d780252e152160590efea1df0e62d683de91aec326a740d3</citedby><cites>FETCH-LOGICAL-c348t-2cdfadf0ec0f98617d780252e152160590efea1df0e62d683de91aec326a740d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0039-6028(99)00845-6$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1966654$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Imre, Á.</creatorcontrib><creatorcontrib>Gontier-Moya, E.</creatorcontrib><creatorcontrib>Beke, D.L.</creatorcontrib><creatorcontrib>Szabó, I.A.</creatorcontrib><creatorcontrib>Erdélyi, G.</creatorcontrib><title>Ostwald ripening of Pd particles on the (101̄2̄) surface of sapphire</title><title>Surface science</title><description>Morphological changes of small Pd particles on the (101̄2̄) surface of α-Al
2O
3 single crystal were investigated by Auger electron spectroscopy in the temperature range 833–923
K. It was shown that practically there was no decrease of the effective thickness during heat treatments under 6×10
−9
mbar. Supposing that the observed change in the Auger intensities is due to the surface Ostwald ripening, it was established that the process was controlled by surface diffusion. It was shown that in this case, taking into account the dissolution of small particles, the normalised Auger intensity is inversely proportional to the normalised average radius. The surface mass transport diffusion coefficients were determined and they were in the range 10
−15–10
−17
m
2
s
−1 in the investigated temperature interval. Their temperature dependence can be given as
D
s
′=
6
+486
−5.93
×10
−5
exp{[−(203±30)
kJ
mol
−1]/RT}
m
2
s
−1
.</description><subject>Applied sciences</subject><subject>Auger electron spectroscopy</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion; interface formation</subject><subject>Exact sciences and technology</subject><subject>Low index single crystal surfaces</subject><subject>Metals. Metallurgy</subject><subject>Metal–semiconductor nonmagnetic thin film structures</subject><subject>Palladium</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Solid–gas interfaces</subject><subject>Surface diffusion</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkMFKAzEQhoMoWKuPIOxBpD2sJtlNNjmJFKtCoYJ6DiGZ2Mh2d022ivc-Xh_K3bbo0bnM5fvnZz6Ezgm-Ipjw62eMM5lyTMVIyjHGImcpP0ADIgqZ0oKJQzT4RY7RSYzvuJtcsgGazmP7pUubBN9A5au3pHbJk00aHVpvSohJXSXtApJRV7VZ0816nMRVcNpAT0bdNAsf4BQdOV1GONvvIXqd3r1MHtLZ_P5xcjtLTZaLNqXGOm0dBoOdFJwUthCYMgqEUcIxkxgcaNITnFouMguSaDAZ5brIsc2G6HJ3twn1xwpiq5Y-GihLXUG9iooWhAuSyQ5kO9CEOsYATjXBL3X4VgSr3praWlO9EiWl2lpTvMtd7At0NLp0QVfGx7-w5JyzvMNudhh0z356CCoaD5UB28kwrbK1_6foB4RhgJ8</recordid><startdate>19991020</startdate><enddate>19991020</enddate><creator>Imre, Á.</creator><creator>Gontier-Moya, E.</creator><creator>Beke, D.L.</creator><creator>Szabó, I.A.</creator><creator>Erdélyi, G.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19991020</creationdate><title>Ostwald ripening of Pd particles on the (101̄2̄) surface of sapphire</title><author>Imre, Á. ; Gontier-Moya, E. ; Beke, D.L. ; Szabó, I.A. ; Erdélyi, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-2cdfadf0ec0f98617d780252e152160590efea1df0e62d683de91aec326a740d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Applied sciences</topic><topic>Auger electron spectroscopy</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion; interface formation</topic><topic>Exact sciences and technology</topic><topic>Low index single crystal surfaces</topic><topic>Metals. Metallurgy</topic><topic>Metal–semiconductor nonmagnetic thin film structures</topic><topic>Palladium</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Solid–gas interfaces</topic><topic>Surface diffusion</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imre, Á.</creatorcontrib><creatorcontrib>Gontier-Moya, E.</creatorcontrib><creatorcontrib>Beke, D.L.</creatorcontrib><creatorcontrib>Szabó, I.A.</creatorcontrib><creatorcontrib>Erdélyi, G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imre, Á.</au><au>Gontier-Moya, E.</au><au>Beke, D.L.</au><au>Szabó, I.A.</au><au>Erdélyi, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ostwald ripening of Pd particles on the (101̄2̄) surface of sapphire</atitle><jtitle>Surface science</jtitle><date>1999-10-20</date><risdate>1999</risdate><volume>441</volume><issue>1</issue><spage>133</spage><epage>139</epage><pages>133-139</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>Morphological changes of small Pd particles on the (101̄2̄) surface of α-Al
2O
3 single crystal were investigated by Auger electron spectroscopy in the temperature range 833–923
K. It was shown that practically there was no decrease of the effective thickness during heat treatments under 6×10
−9
mbar. Supposing that the observed change in the Auger intensities is due to the surface Ostwald ripening, it was established that the process was controlled by surface diffusion. It was shown that in this case, taking into account the dissolution of small particles, the normalised Auger intensity is inversely proportional to the normalised average radius. The surface mass transport diffusion coefficients were determined and they were in the range 10
−15–10
−17
m
2
s
−1 in the investigated temperature interval. Their temperature dependence can be given as
D
s
′=
6
+486
−5.93
×10
−5
exp{[−(203±30)
kJ
mol
−1]/RT}
m
2
s
−1
.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/S0039-6028(99)00845-6</doi><tpages>7</tpages></addata></record> |
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source | ScienceDirect Journals (5 years ago - present) |
subjects | Applied sciences Auger electron spectroscopy Condensed matter: structure, mechanical and thermal properties Diffusion interface formation Exact sciences and technology Low index single crystal surfaces Metals. Metallurgy Metal–semiconductor nonmagnetic thin film structures Palladium Physics Solid surfaces and solid-solid interfaces Solid–gas interfaces Surface diffusion Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Ostwald ripening of Pd particles on the (101̄2̄) surface of sapphire |
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