Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy

The growth characteristics and the crystalline quality of thick (approximately 100 mu m) (100) CdTe epitaxial layers grown on (100) GaAs and (100) GaAs/Si substrates in a MOVPE system for X-ray, gamma-ray detectors applications were investigated. The growth rate was constant up to the layer thicknes...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2002-10, Vol.41 (Part 2, No. 10A), p.L1109-L1111
Hauptverfasser:	Yasuda, Kazuhito, Niraula, Madan, Ishiguro, Tomoaki, Kawauchi, Yasuhiro, Morishita, Hiroshi, Agata, Yasunori
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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