Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots

Strong-beam diffraction contrast in transmission electron microscopy (TEM) associated with quantum dots (coherently strained islands) of InAs deposited on a GaAs substrate is analysed. The elastic displacement field associated with each quantum dot is determined using the finite-element method and t...

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Veröffentlicht in:	Philosophical magazine letters 1999-04, Vol.79 (4), p.201-208
1. Verfasser:	Androussi, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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