High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, where...

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Veröffentlicht in:	Thin solid films 2002-09, Vol.416 (1), p.92-96
Hauptverfasser:	Minami, Tadatsugu, Ida, Satoshi, Miyata, Toshihiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Arc plasma evaporation Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology GZO ITO Low-field transport and mobility piezoresistance Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetallic inorganics Other nonmetals Physics TCO film Thin film Vacuum deposition Visible and ultraviolet spectra ZnO
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