High-power photoconductive semiconductor switches treated with amorphic diamond coatings
The mechanical and semiconductor properties of amorphic diamond can be employed to improve the photoconductive semiconductor switch longevity by coating the switch cathode or anode areas or both. In this paper, issues concerning the switch longevity were studied by fabrication and testing the GaAs p...
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| Veröffentlicht in: | IEEE transactions on plasma science 2002-10, Vol.30 (5), p.1897-1904 |
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| container_end_page | 1904 |
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| container_issue | 5 |
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| container_title | IEEE transactions on plasma science |
| container_volume | 30 |
| creator | Davanloo, F. Collins, C.B. Agee, F.J. |
| description | The mechanical and semiconductor properties of amorphic diamond can be employed to improve the photoconductive semiconductor switch longevity by coating the switch cathode or anode areas or both. In this paper, issues concerning the switch longevity were studied by fabrication and testing the GaAs photoconductive switches treated with the amorphic diamond under different switch configurations, gap settings, and diamond coating thickness. The tunneling of electrons from amorphic diamond to GaAs during the off-state stage of operation provided preavalanche sites that diffused conduction current upon switch activation. A significant improvement in switch lifetime was demonstrated by testing the diamond-coated switch performance in a prototype pulser. Elementary processes involved in conduction of diamond treated switch and other design options such as coating of switch anode area are examined and discussed. |
| doi_str_mv | 10.1109/TPS.2002.805377 |
| format | Article |
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In this paper, issues concerning the switch longevity were studied by fabrication and testing the GaAs photoconductive switches treated with the amorphic diamond under different switch configurations, gap settings, and diamond coating thickness. The tunneling of electrons from amorphic diamond to GaAs during the off-state stage of operation provided preavalanche sites that diffused conduction current upon switch activation. A significant improvement in switch lifetime was demonstrated by testing the diamond-coated switch performance in a prototype pulser. Elementary processes involved in conduction of diamond treated switch and other design options such as coating of switch anode area are examined and discussed.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2002.805377</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; Cathodes ; Coating ; Coatings ; Diamond films ; Diamonds ; Fabrication ; Gallium arsenide ; Gallium arsenides ; Longevity ; Mechanical factors ; Photoconducting devices ; Photoconductivity ; Semiconductors ; Switches ; Switching ; Testing</subject><ispartof>IEEE transactions on plasma science, 2002-10, Vol.30 (5), p.1897-1904</ispartof><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-d614c3a545a074b9c34f77166cbb68350b943b61c8a29efa33d707814c7054f3</citedby><cites>FETCH-LOGICAL-c380t-d614c3a545a074b9c34f77166cbb68350b943b61c8a29efa33d707814c7054f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1178227$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1178227$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Davanloo, F.</creatorcontrib><creatorcontrib>Collins, C.B.</creatorcontrib><creatorcontrib>Agee, F.J.</creatorcontrib><title>High-power photoconductive semiconductor switches treated with amorphic diamond coatings</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><description>The mechanical and semiconductor properties of amorphic diamond can be employed to improve the photoconductive semiconductor switch longevity by coating the switch cathode or anode areas or both. In this paper, issues concerning the switch longevity were studied by fabrication and testing the GaAs photoconductive switches treated with the amorphic diamond under different switch configurations, gap settings, and diamond coating thickness. The tunneling of electrons from amorphic diamond to GaAs during the off-state stage of operation provided preavalanche sites that diffused conduction current upon switch activation. A significant improvement in switch lifetime was demonstrated by testing the diamond-coated switch performance in a prototype pulser. Elementary processes involved in conduction of diamond treated switch and other design options such as coating of switch anode area are examined and discussed.</description><subject>Anodes</subject><subject>Cathodes</subject><subject>Coating</subject><subject>Coatings</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Longevity</subject><subject>Mechanical factors</subject><subject>Photoconducting devices</subject><subject>Photoconductivity</subject><subject>Semiconductors</subject><subject>Switches</subject><subject>Switching</subject><subject>Testing</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkcFrFTEQh4Mo-KyePXhZPOhpX2cyySY5SqlWKCj4Dt5CNpvtpry3WZN9Lf73pryC4KGeZn7w_QaGj7G3CFtEMOe77z-2HIBvNUhS6hnboCHTGlLyOdsAGGpJI71kr0q5BUAhgW_Yz6t4M7VLug-5Waa0Jp_m4ejXeBeaEg7xMabclPu4-imUZs3BrWFoap4ad0h5maJvhljXeWh8cmucb8pr9mJ0-xLePM4ztvt8ubu4aq-_ffl68em69aRhbYcOhScnhXSgRG88iVEp7Drf950mCb0R1HfoteMmjI5oUKB0LSmQYqQz9vF0dsnp1zGU1R5i8WG_d3NIx2INKCNQk6rkhydJrglQcfg_qFAiqa6C7_8Bb9Mxz_Vbi0Zip7nQFTo_QT6nUnIY7ZLjweXfFsE-iLNVnH0QZ0_iauPdqRFDCH9pVJpzRX8AddGUAw</recordid><startdate>20021001</startdate><enddate>20021001</enddate><creator>Davanloo, F.</creator><creator>Collins, C.B.</creator><creator>Agee, F.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20021001</creationdate><title>High-power photoconductive semiconductor switches treated with amorphic diamond coatings</title><author>Davanloo, F. ; Collins, C.B. ; Agee, F.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-d614c3a545a074b9c34f77166cbb68350b943b61c8a29efa33d707814c7054f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Anodes</topic><topic>Cathodes</topic><topic>Coating</topic><topic>Coatings</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Fabrication</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Longevity</topic><topic>Mechanical factors</topic><topic>Photoconducting devices</topic><topic>Photoconductivity</topic><topic>Semiconductors</topic><topic>Switches</topic><topic>Switching</topic><topic>Testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Davanloo, F.</creatorcontrib><creatorcontrib>Collins, C.B.</creatorcontrib><creatorcontrib>Agee, F.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Davanloo, F.</au><au>Collins, C.B.</au><au>Agee, F.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power photoconductive semiconductor switches treated with amorphic diamond coatings</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>2002-10-01</date><risdate>2002</risdate><volume>30</volume><issue>5</issue><spage>1897</spage><epage>1904</epage><pages>1897-1904</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>The mechanical and semiconductor properties of amorphic diamond can be employed to improve the photoconductive semiconductor switch longevity by coating the switch cathode or anode areas or both. In this paper, issues concerning the switch longevity were studied by fabrication and testing the GaAs photoconductive switches treated with the amorphic diamond under different switch configurations, gap settings, and diamond coating thickness. The tunneling of electrons from amorphic diamond to GaAs during the off-state stage of operation provided preavalanche sites that diffused conduction current upon switch activation. A significant improvement in switch lifetime was demonstrated by testing the diamond-coated switch performance in a prototype pulser. Elementary processes involved in conduction of diamond treated switch and other design options such as coating of switch anode area are examined and discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPS.2002.805377</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0093-3813 |
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| issn | 0093-3813 1939-9375 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anodes Cathodes Coating Coatings Diamond films Diamonds Fabrication Gallium arsenide Gallium arsenides Longevity Mechanical factors Photoconducting devices Photoconductivity Semiconductors Switches Switching Testing |
| title | High-power photoconductive semiconductor switches treated with amorphic diamond coatings |
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