Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements

A simple and efficient way of extracting the small‐signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficienc...

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Veröffentlicht in:	International journal of RF and microwave computer-aided engineering 2002-07, Vol.12 (4), p.311-319
Hauptverfasser:	Ooi, B. L., Zhou, T. S., Kooi, P. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminum gallium arsenic/gallium arsenic heterojunction bipolar transistor small-signal model
Online-Zugang:	Volltext
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