Fundamental understanding and implementation of Al-enhanced PECVD SiNx hydrogenation in silicon ribbons

A low-cost, manufacturable defect gettering and passivation treatment, involving simultaneous anneal of a PECVD SiNx film and a screen-printed Al layer, improves the lifetime in Si ribbon materials from 1-10 ms to over 20 ms. Results indicate that the optimum anneal temperature for SiNx-induced hydr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Solar energy materials and solar cells 2002-10, Vol.74 (1-4), p.117-126
Hauptverfasser:	ROHATGI, A, YELUNDUR, V, JEONG, J, EBONG, A, ROSENBLUM, M. D, HANOKA, J. I
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!