Field Emission from GaN Self-Organized Nanotips

Field Emission from GaN Self-Organized Nanotips

GaN self-organized nanotips were applied to the cold cathode field emitter, which was fabricated by reactive ion etching (RIE). Field emission from the GaN nanotips was observed for the first time. The microscopic current I through the anode hole (f=20 mu m) at the anode electrode was 0.1 nA at 900...

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Veröffentlicht in:Japanese Journal of Applied Physics 2002-11, Vol.41 (Part 2, No. 11A), p.L1194-L1196
Hauptverfasser: Terada, Yuusuke, Yoshida, Harumasa, Urushido, Tatsuhiro, Miyake, Hideto, Hiramatsu, Kazumasa
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container_end_page L1196
container_issue Part 2, No. 11A
container_start_page L1194
container_title Japanese Journal of Applied Physics
container_volume 41
creator Terada, Yuusuke
Yoshida, Harumasa
Urushido, Tatsuhiro
Miyake, Hideto
Hiramatsu, Kazumasa
description GaN self-organized nanotips were applied to the cold cathode field emitter, which was fabricated by reactive ion etching (RIE). Field emission from the GaN nanotips was observed for the first time. The microscopic current I through the anode hole (f=20 mu m) at the anode electrode was 0.1 nA at 900 V. The field enhancement factor b d, which is related to the top structure of the emitter and is the product of the field conversion factor b and the sample-anode gap d, was estimated to be 300 from the Fowler-Nordheim (F-N) plot. The microscopic current I was stable at 12.5 nA for 3600 s from the onset of voltage application (standard deviation 0.64 nA). 11 refs.
doi_str_mv 10.1143/JJAP.41.L1194
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