Studies of lattice-matched InGaAs/InAlAs single quantum well by photoreflectance spectroscopy and wet chemical etching
Photoreflectance (PR) spectra were measured from lattice-matched In 0.53Ga 0.47As/In 0.52Al 0.48As single quantum well structures (SQWs). The measurements allowed the observation of interband transitions from the heavy- and light-hole valence sub-bands to the conduction sub-bands. The transition ene...
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Veröffentlicht in: | Solid state communications 1999-01, Vol.111 (4), p.223-228 |
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