Self-consistent method for optimization of parameters of diode temperature sensors

Within the framework of a model for diffusion transport through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the aid of criteria commonly used to describe semiconductor diode structures theoretically, relations are obtained for estimating the parameters of the diode temperature sensor. The set of these parameters provides either the maximum extent of a thermometric characteristic toward the higher temperature range, or the maximum sensitivity of the diode temperature sensor. For Ge, Si, GaAs diode temperature sensors with n(+)p- and p(+)n-junctions, the limits of thermometric characteristics are determined, together with temperature dependences of sensitivity, static, and dynamic resistance calculated for cases of the maximum length of the thermometric characteristic and of the maximum sensitivity. It is shown that experimentally measured characteristics of diode temperature sensors are within the ranges determined by the limiting characteristics. (Author)