Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium

HEMTs on germanium have the advantage that the substrate can be easily removed, which facilitates integration into low‐cost MCM‐D circuit implementations. Although germanium has (dispersive) characteristics similar to silicon, we show that the large‐signal modeling of these thinned Ge based metamorphic high‐electron mobility transistors (HEMTs) is similar to that of GaAs and InP HEMTs. Two types of look‐up table based nonlinear models that are respectively based on direct extraction and optimization are developed and evaluated. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12, 439–447, 2002. Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mmce10042