Arsenic incorporation in MBE grown Hg1−xCdxTe

Study focuses on developing an understanding of the microscopic behavior of As incorporation during MBE growth. In particular, the question of whether As incorporates as individual As atoms, as As2 dimers, or as As4 tetramers is addressed for MBE growth with an As4 source. A quasi- thermodynamical m...

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Veröffentlicht in:	Journal of electronic materials 1999-06, Vol.28 (6), p.789-792
Hauptverfasser:	Grein, C. H., Garland, J. W., Sivananthan, S., Wijewarnasuriya, P. S., Aqariden, F., Fuchs, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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