Parasitic bipolar gain reduction and the optimization of 0.25-μm partially depleted SOI MOSFETs

An in-depth analysis of the role of parasitic bipolar gain reduction in 0.25- mu m partially depleted SOI MOSFET's is presented, considering both dc characteristics as well as circuit operation. The effect of channel doping, silicide proximity, and germanium implantation on the lateral bipolar...

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Veröffentlicht in:	IEEE transactions on electron devices 1999-11, Vol.46 (11), p.2201-2209
Hauptverfasser:	Mistry, K.R., Sleight, J.W., Grula, G., Flatley, R., Miner, B., Bair, L.A., Antoniadis, D.A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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