Fundamental linewidth of an AlN microcavity Raman laser
Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3...
Gespeichert in:
| Veröffentlicht in: | Optics letters 2022-09, Vol.47 (17), p.4295-4298 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4298 |
|---|---|
| container_issue | 17 |
| container_start_page | 4295 |
| container_title | Optics letters |
| container_volume | 47 |
| creator | Liu, Kewei Yao, Shunyu Ding, Yulei Wang, Zihao Guo, Yanan Yan, Jianchang Wang, Junxi Yang, Changxi Bao, Chengying |
| description | Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived. |
| doi_str_mv | 10.1364/OL.466195 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2709020487</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2709020487</sourcerecordid><originalsourceid>FETCH-LOGICAL-c220t-2f7a8845ea6a3bb6350f5afc108f8bdbfe4c9f5cef91f857dec0fbccce0878f83</originalsourceid><addsrcrecordid>eNpd0E1LxDAQBuAgCq6rB_9BwYseuk6-muS4LK4KxYLoOaRpgl36sSatsv_eyHryNDA8DO-8CF1jWGFasPuqXLGiwIqfoAXmVOVMKHaKFoBZkSuuyDm6iHEHAIWgdIHEdh4a07thMl3WtYP7bpvpIxt9ZoZs3b1kfWvDaM1XOx2yV9OnbWeiC5fozJsuuqu_uUTv24e3zVNeVo_Pm3WZW0JgyokXRkrGnSkMreuCcvDceItBelk3tXfMKs-t8wp7yUXjLPjaWutAikToEt0e7-7D-Dm7OOm-jdZ1nRncOEdNBCggwKRI9OYf3Y1zGFK6pDCRKQeQpO6OKr0VY3Be70Pbm3DQGPRvhboq9bFC-gMVCWL5</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2712888402</pqid></control><display><type>article</type><title>Fundamental linewidth of an AlN microcavity Raman laser</title><source>OSA_美国光学学会数据库1</source><creator>Liu, Kewei ; Yao, Shunyu ; Ding, Yulei ; Wang, Zihao ; Guo, Yanan ; Yan, Jianchang ; Wang, Junxi ; Yang, Changxi ; Bao, Chengying</creator><creatorcontrib>Liu, Kewei ; Yao, Shunyu ; Ding, Yulei ; Wang, Zihao ; Guo, Yanan ; Yan, Jianchang ; Wang, Junxi ; Yang, Changxi ; Bao, Chengying</creatorcontrib><description>Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.466195</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Aluminum nitride ; Microcavities ; Q factors ; Raman lasers ; Sapphire</subject><ispartof>Optics letters, 2022-09, Vol.47 (17), p.4295-4298</ispartof><rights>Copyright Optical Society of America Sep 1, 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c220t-2f7a8845ea6a3bb6350f5afc108f8bdbfe4c9f5cef91f857dec0fbccce0878f83</citedby><cites>FETCH-LOGICAL-c220t-2f7a8845ea6a3bb6350f5afc108f8bdbfe4c9f5cef91f857dec0fbccce0878f83</cites><orcidid>0000-0002-9972-6965 ; 0000-0001-9187-0041 ; 0000-0002-9991-6398</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3258,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, Kewei</creatorcontrib><creatorcontrib>Yao, Shunyu</creatorcontrib><creatorcontrib>Ding, Yulei</creatorcontrib><creatorcontrib>Wang, Zihao</creatorcontrib><creatorcontrib>Guo, Yanan</creatorcontrib><creatorcontrib>Yan, Jianchang</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Yang, Changxi</creatorcontrib><creatorcontrib>Bao, Chengying</creatorcontrib><title>Fundamental linewidth of an AlN microcavity Raman laser</title><title>Optics letters</title><description>Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.</description><subject>Aluminum nitride</subject><subject>Microcavities</subject><subject>Q factors</subject><subject>Raman lasers</subject><subject>Sapphire</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNpd0E1LxDAQBuAgCq6rB_9BwYseuk6-muS4LK4KxYLoOaRpgl36sSatsv_eyHryNDA8DO-8CF1jWGFasPuqXLGiwIqfoAXmVOVMKHaKFoBZkSuuyDm6iHEHAIWgdIHEdh4a07thMl3WtYP7bpvpIxt9ZoZs3b1kfWvDaM1XOx2yV9OnbWeiC5fozJsuuqu_uUTv24e3zVNeVo_Pm3WZW0JgyokXRkrGnSkMreuCcvDceItBelk3tXfMKs-t8wp7yUXjLPjaWutAikToEt0e7-7D-Dm7OOm-jdZ1nRncOEdNBCggwKRI9OYf3Y1zGFK6pDCRKQeQpO6OKr0VY3Be70Pbm3DQGPRvhboq9bFC-gMVCWL5</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Liu, Kewei</creator><creator>Yao, Shunyu</creator><creator>Ding, Yulei</creator><creator>Wang, Zihao</creator><creator>Guo, Yanan</creator><creator>Yan, Jianchang</creator><creator>Wang, Junxi</creator><creator>Yang, Changxi</creator><creator>Bao, Chengying</creator><general>Optical Society of America</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-9972-6965</orcidid><orcidid>https://orcid.org/0000-0001-9187-0041</orcidid><orcidid>https://orcid.org/0000-0002-9991-6398</orcidid></search><sort><creationdate>20220901</creationdate><title>Fundamental linewidth of an AlN microcavity Raman laser</title><author>Liu, Kewei ; Yao, Shunyu ; Ding, Yulei ; Wang, Zihao ; Guo, Yanan ; Yan, Jianchang ; Wang, Junxi ; Yang, Changxi ; Bao, Chengying</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c220t-2f7a8845ea6a3bb6350f5afc108f8bdbfe4c9f5cef91f857dec0fbccce0878f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum nitride</topic><topic>Microcavities</topic><topic>Q factors</topic><topic>Raman lasers</topic><topic>Sapphire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Kewei</creatorcontrib><creatorcontrib>Yao, Shunyu</creatorcontrib><creatorcontrib>Ding, Yulei</creatorcontrib><creatorcontrib>Wang, Zihao</creatorcontrib><creatorcontrib>Guo, Yanan</creatorcontrib><creatorcontrib>Yan, Jianchang</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Yang, Changxi</creatorcontrib><creatorcontrib>Bao, Chengying</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Kewei</au><au>Yao, Shunyu</au><au>Ding, Yulei</au><au>Wang, Zihao</au><au>Guo, Yanan</au><au>Yan, Jianchang</au><au>Wang, Junxi</au><au>Yang, Changxi</au><au>Bao, Chengying</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fundamental linewidth of an AlN microcavity Raman laser</atitle><jtitle>Optics letters</jtitle><date>2022-09-01</date><risdate>2022</risdate><volume>47</volume><issue>17</issue><spage>4295</spage><epage>4298</epage><pages>4295-4298</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/OL.466195</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9972-6965</orcidid><orcidid>https://orcid.org/0000-0001-9187-0041</orcidid><orcidid>https://orcid.org/0000-0002-9991-6398</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0146-9592 |
| ispartof | Optics letters, 2022-09, Vol.47 (17), p.4295-4298 |
| issn | 0146-9592 1539-4794 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2709020487 |
| source | OSA_美国光学学会数据库1 |
| subjects | Aluminum nitride Microcavities Q factors Raman lasers Sapphire |
| title | Fundamental linewidth of an AlN microcavity Raman laser |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T10%3A59%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fundamental%20linewidth%20of%20an%20AlN%20microcavity%20Raman%20laser&rft.jtitle=Optics%20letters&rft.au=Liu,%20Kewei&rft.date=2022-09-01&rft.volume=47&rft.issue=17&rft.spage=4295&rft.epage=4298&rft.pages=4295-4298&rft.issn=0146-9592&rft.eissn=1539-4794&rft_id=info:doi/10.1364/OL.466195&rft_dat=%3Cproquest_cross%3E2709020487%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2712888402&rft_id=info:pmid/&rfr_iscdi=true |